Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities

D. Porras, C. Ciuti, J. J. Baumberg, and C. Tejedor Departamento de Fı́sica Teórica de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Cantoblanco, Madrid, Spain Physics Department, University of California San Diego, 3500 Gilman Drive, La Jolla, California 92093 Department of Physics & Astronomy, University of Southampton, Southhampton SO17 IBJ, United Kingdom ~Received 12 February...

Low resistance ohmic contacts on wide band-gap GaN

We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (--Or7 cme3) using an Ah% bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN su...

Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials resu...

Polariton interactions in semiconductor microcavities

Mots-clés : Exciton Polariton Microcavité Spectroscopie Semiconducteur Interaction In this review, we will try to summarize the results that we have obtained on the measurement of polariton interactions. We will describe here the samples, the experimental systems and some of the important results. We will also give a few highlights on the theoretical description of these results. One of the mai...

Bend loss in surface plasmon polariton band-gap structures